Biography
I work on the development of low-power resistive memory for conventional and neuromorphic computing applications. For this, I am investigating the properties of materials with ionic channels intrinsic to their structure and how these properties can be transferred to industry-compatible hafnium oxide.
Before joining Cambridge, I received my PhD degree from Lund University in Sweden, where I worked on the electrical characterisation of gate oxide defects in III-V MOS transistors. (Thesis ISBN 978-91-7895-520-6)
Publications
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M. Hellenbrand, I. Teck, J. L. MacManus-Driscoll, "Progress of emerging non-volatile memory technologies in industry", MRS Communications, November 2024, doi: 10.1557/s43579-024-00660-2
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M. Hellenbrand, J. MacManus-Driscoll, "Multi-level resistive switching in hafnium-oxide-based devices for neuromorphic computing", Nano Convergence, September 2023, doi: 10.1186/s40580-023-00392-4
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M. Hellenbrand, B. Bakhit, H. Dou, M. Xiao, M. O. Hill, Z. Sun, A. Mehonic, A. Chen, Q. Jia, H. Wang, J. L. MacManus-Driscoll, "Thin film design of amorphous hafnium oxide nanocomposites enabling strong interfacial resistive switching uniformity", Science Advances, June 2023, doi: 10.1126/sciadv.adg1946
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M. Hellenbrand, E. Lind, O.-P. Kilpi & L.-E. Wernersson, "Effects of traps in the gate stack on the small-signal RF response of III-V nanowire MOSFETs", Solid-State Electronics, May 2020, doi: 10.1016/j.sse.2020.107840
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M. Hellenbrand, E. Memisevic, M. Berg, O.-P. Kilpi, J. Svensson & L.-E. Wernersson, "Low-Frequency Noise in III-V Nanowire TFETs and MOSFETs", IEEE Electron Device Letters, September 2017, doi: 10.1109/LED.2017.2757538
- E. Memisevic, M. Hellenbrand, E. Lind, A. R. Persson, S. Sant, A. Schenk, J. Svensson, R. Wallenberg & L.-E. Wernersson, "Individual Defects in InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors Operating below 60 mV/decade", Nano Letters, June 2017, doi: 10.1021/acs.nanolett.7b01455
