Dr Abin Varghese

Dr Abin Varghese is broadly interested in nanoscale devices and thin films for various applications. The focus of his current research is oxide-based electronic devices for neuromorphic and in-memory computing.

Resistive Switching Systems for Neuromorphic Device Applications
His research focuses on understanding the electrical and material properties of thin film oxides that exhibit resistive switching or memristive behaviour, which is governed by defects, vacancies, and interface/filament physics. His approach has been to combine DC and pulse-based electrical measurements and multiscale modelling (material to device level) to understand the rich physics and switching properties. He aims to utilise the stochastic switching and dynamic response for computing-relevant applications and to explore neuromorphic functionalities. The analogue conductance modulation in these devices can be harnessed for energy-efficient edge and onhardware AI inference.

Heterostructures based on 2D Materials
He is interested in interfacing 2D materials with different material systems to form heterostructures and to understand emergent interfacial properties. One example is the integration of ultrathin MoS2 with a piezoelectric thin film to realise electrically controlled strain transfer to the 2D material, resulting in modulation its electrical and optical properties. He is also interested in engineering oxide-2D heterostructures for programmable memory and logic devices.